SnIrSe₂ is an intermetallic semiconductor compound combining tin, iridium, and selenium in a layered crystal structure. This is a research-phase material being investigated for potential thermoelectric and electronic applications, representing an emerging class of mixed-metal chalcogenides that aim to combine the thermal properties of tin and selenium with the electronic behavior influenced by iridium.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5240 | eV/atom | — |