SnI₄ is a tin(IV) iodide semiconductor compound that belongs to the halide perovskite and post-perovskite material families. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and halide composition offer potential advantages in light emission, detection, and energy conversion devices compared to traditional semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7.367 | GPa | — | ||
Shear Modulus(G) | 4.780 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6818 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2910 | eV/atom | — |