Sn₁Bi₁O₄ is a binary metal oxide semiconductor compound combining tin and bismuth in a 1:1 stoichiometric ratio. This material belongs to the family of mixed-metal oxides and is primarily of research interest for optoelectronic and photocatalytic applications, where the bismuth-tin oxide system offers tunable bandgap properties and potential for light-driven catalysis. While not yet a commodity material in high-volume manufacturing, it represents an emerging candidate for visible-light photocatalysis, gas sensing, and potentially next-generation semiconductor devices where alternative tin or bismuth oxide compositions show limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,665.6 | ksi | — | ||
Shear Modulus(G) | 4,702.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.322 | eV/atom | — |