Sn1 As3

semiconductor

· Sn1 As3

Sn1As3 is a III-V semiconductor compound composed of tin and arsenic, belonging to the broader family of binary semiconductors explored for optoelectronic and electronic device applications. This material remains primarily in the research and development phase, with interest driven by its potential for narrow bandgap semiconductors and thermoelectric applications where conventional materials like GaAs or InAs may have limitations. Engineers considering tin arsenides typically evaluate them for specialized niche applications requiring unusual electrical or thermal properties, though commercial availability and device maturity are significantly limited compared to established III-V semiconductors.

research semiconductorsnarrow bandgap devicesthermoelectric materialsoptoelectronic researchinfrared detector developmentexperimental compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	64.96	GPa	—
Shear Modulus(G)	9.653	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00140	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3570	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn1 As3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control