Sn0.99Te1Pb0.01
semiconductor· Sn0.99Te1Pb0.01
Sn₀.₉₉Te₁Pb₀.₀₁ is a lead-doped tin telluride compound semiconductor, representing a narrow-bandgap material within the IV-VI semiconductor family. This is primarily a research and development material studied for its potential in infrared optoelectronics and thermoelectric applications, where the lead dopant modifies carrier concentration and electronic properties relative to undoped SnTe.
infrared detectorsthermoelectric cooling devicesmid-wave infrared sensinglow-temperature applicationsmaterials researchsemiconductor doping studies
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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