Sn0.5GaZn3.5O6

semiconductor

· Sn0.5GaZn3.5O6

Sn₀.₅GaZn₃.₅O₆ is a mixed-metal oxide semiconductor compound combining tin, gallium, and zinc oxides in a crystalline structure. This material belongs to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, primarily investigated in research settings for optoelectronic and photocatalytic applications. Its multi-element composition and tunable electronic properties make it a candidate for next-generation transparent electronics where conventional indium tin oxide (ITO) alternatives are needed, though industrial deployment remains limited and material performance is still under active development.

transparent conductive coatingsphotocatalytic devicesoptoelectronic researchwide-bandgap semiconductor applicationsthin-film electronicsITO replacement candidates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.990	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.5GaZn3.5O6

Electrical Properties

Regulatory Screening

Environmental

Export Control