Sn0.1Te1Pb0.9

semiconductor

· Sn0.1Te1Pb0.9

Sn0.1Te1Pb0.9 is a lead-tellurium semiconductor alloy with minor tin doping, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily investigated for infrared detection and thermal imaging applications, where its bandgap and carrier properties enable sensitivity in the mid- to long-wave infrared spectrum. Lead telluride-based alloys are well-established in thermoelectric and infrared detector markets; the tin incorporation in this composition modifies bandgap and lattice parameters to tune performance for specific wavelength ranges, making it notable for cooled and uncooled thermal sensor systems where material engineering of the Pb-Te system offers advantages over competing narrow-gap semiconductors.

infrared detectorsthermal imaging sensorsthermoelectric devicesnarrow-bandgap semiconductorsmilitary/aerospace sensingresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1600	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.1Te1Pb0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control