Sn0.1Te1Pb0.9
semiconductorSn0.1Te1Pb0.9 is a lead-tellurium semiconductor alloy with minor tin doping, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily investigated for infrared detection and thermal imaging applications, where its bandgap and carrier properties enable sensitivity in the mid- to long-wave infrared spectrum. Lead telluride-based alloys are well-established in thermoelectric and infrared detector markets; the tin incorporation in this composition modifies bandgap and lattice parameters to tune performance for specific wavelength ranges, making it notable for cooled and uncooled thermal sensor systems where material engineering of the Pb-Te system offers advantages over competing narrow-gap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |