Sn0.17Pb0.83Se1

semiconductor

· Sn0.17Pb0.83Se1

Sn0.17Pb0.83Se1 is a lead-tin selenide compound, a narrow-bandgap semiconductor belonging to the IV-VI lead chalcogenide family. This material is primarily of research and specialized industrial interest for infrared detection and thermal imaging applications, where its bandgap energy makes it sensitive to mid- and long-wavelength infrared radiation. Lead-tin selenides are valued in cryogenic and room-temperature infrared detector systems as alternatives to more common mercury-cadmium telluride, though composition and processing are critical to achieving consistent performance; this particular tin-rich variant represents a specific optimization for particular infrared wavelength windows.

infrared detectorsthermal imaging sensorscryogenic photonicsmilitary surveillance systemsresearch instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.17Pb0.83Se1

Electrical Properties

Regulatory Screening

Environmental

Export Control