Sn0.08Pb0.92Se1

semiconductor

· Sn0.08Pb0.92Se1

Sn0.08Pb0.92Se is a lead-tin selenide compound semiconductor belonging to the IV-VI narrow bandgap material family, primarily investigated for infrared detection and thermal imaging applications. This material system is of particular interest for long-wavelength infrared (LWIR) sensing where its narrow bandgap enables room-temperature or thermoelectrically-cooled operation, positioning it as an alternative to more common lead-telluride compounds. The high lead content makes this composition relevant to legacy thermal detector systems and materials research focused on tuning bandgap through tin doping, though modern applications increasingly favor competing technologies due to lead's regulatory constraints in some regions.

infrared detectorsthermal imaging sensorslong-wavelength IR applicationsthermoelectric cooled detectorsmilitary/aerospace thermal systemsmaterials research semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06000	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.08Pb0.92Se1

Electrical Properties

Regulatory Screening

Environmental

Export Control