Sn0.08Pb0.92Se1
semiconductorSn0.08Pb0.92Se is a lead-tin selenide compound semiconductor belonging to the IV-VI narrow bandgap material family, primarily investigated for infrared detection and thermal imaging applications. This material system is of particular interest for long-wavelength infrared (LWIR) sensing where its narrow bandgap enables room-temperature or thermoelectrically-cooled operation, positioning it as an alternative to more common lead-telluride compounds. The high lead content makes this composition relevant to legacy thermal detector systems and materials research focused on tuning bandgap through tin doping, though modern applications increasingly favor competing technologies due to lead's regulatory constraints in some regions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |