Sn0.07Pb0.93Se is a lead-tin selenide compound belonging to the IV-VI semiconductor family, where lead selenide (PbSe) is doped with tin to modify its electronic properties. This material is primarily of research interest for infrared optoelectronics and thermoelectric applications, where the tin addition tunes the bandgap and carrier concentration compared to pure PbSe. While not widely deployed in mainstream products, Sn-Pb-Se alloys are investigated for mid-to-long-wavelength infrared detection and solid-state cooling devices, where their narrow-gap semiconductor characteristics enable sensitivity in the thermal infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08000 | eV | — |