Sm₃In₁N₁ is an intermetallic nitride semiconductor compound combining samarium, indium, and nitrogen. This material belongs to the rare-earth nitride family and is primarily of research interest for investigating electronic and optical properties in rare-earth-based semiconductor systems. Potential applications include wide-bandgap semiconductor devices, optoelectronics, and high-temperature electronic components, though industrial adoption remains limited; researchers explore such materials to understand how rare-earth elements can enable novel band structures and thermal stability in nitride semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,279.9 | ksi | — | ||
Shear Modulus(G) | 8,377.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.001 | eV/atom | — |