Sm₂Ti₃Bi₂O₁₂ is an experimental ternary oxide semiconductor combining samarium, titanium, and bismuth in a mixed-valence structure. This compound belongs to the family of complex perovskite-related oxides and is primarily studied in academic research for potential applications in photocatalysis, ferroelectrics, and optoelectronic devices, where the combination of rare-earth (Sm) and bismuth redox activity offers tunable electronic properties relative to simpler binary titanates.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.056 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.917 | eV/atom | — |