Samarium gallium oxide (SmGaO₃) is a rare-earth perovskite semiconductor compound that combines samarium (an lanthanide element) with gallium and oxygen. This material is primarily of research interest rather than established commercial production, being investigated for potential applications in high-temperature electronics, photonic devices, and wide-bandgap semiconductor technologies where rare-earth dopants or perovskite crystal structures offer functional advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 196.3 | GPa | — | ||
Shear Modulus(G) | 111.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.899 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.729 | eV/atom | — |