Sm1 Bi2 I1 O4
semiconductorSm₁Bi₂I₁O₄ is an experimental mixed-metal oxide-halide semiconductor compound containing samarium, bismuth, iodine, and oxygen. This material belongs to the family of complex metal halides and oxides being explored in photovoltaics and optoelectronic research, where bismuth-based semiconductors are of particular interest as lead-free alternatives for light-absorbing layers in perovskite-related solar cells and photodetectors. While not yet commercialized for mainstream applications, materials in this compositional space are being investigated for their tunable bandgaps, potential for solution processing, and reduced toxicity compared to conventional semiconductor alternatives—making them candidates for next-generation light-harvesting and sensing devices in research and development environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |