Sm1 Bi2 Cl1 O4
semiconductorSm₁Bi₂Cl₁O₄ is a mixed-metal oxide-halide semiconductor compound combining samarium, bismuth, chlorine, and oxygen in a layered crystal structure. This is a research-phase material within the broader family of bismuth-based semiconductors and halide perovskites, investigated primarily for its potential in optoelectronic and photocatalytic applications where the bandgap engineering from mixed-valent metal sites and halide incorporation can be tailored. The material's primary interest lies in fundamental studies of photon absorption, charge separation, and catalytic activity rather than established commercial production, making it relevant to researchers exploring next-generation semiconductors for visible-light photocatalysis, thin-film electronics, or environmental remediation devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |