Sm₁Bi₂Br₁O₄ is an experimental mixed-metal halide oxide semiconductor combining samarium, bismuth, bromine, and oxygen in a layered crystal structure. This compound belongs to the family of perovskite-related halides and mixed-anion semiconductors being explored for next-generation optoelectronic and photovoltaic applications where tunable bandgaps and enhanced light absorption are advantageous. While not yet commercialized, materials in this chemical family are of significant research interest for their potential in thin-film solar cells, X-ray detection, and photocatalytic devices due to their compositional flexibility and reduced toxicity compared to lead-based alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 78.00 | GPa | — | ||
Shear Modulus(G) | 41.64 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.369 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.137 | eV/atom | — |