SiTaO2N

semiconductor

· SiTaO2N

SiTaO₂N is a quaternary ceramic semiconductor compound combining silicon, tantalum, oxygen, and nitrogen—a member of the oxynitride family that bridges traditional oxides and nitrides. This material is primarily investigated in research and emerging applications for photocatalysis, particularly water splitting and environmental remediation, where its tunable bandgap and mixed anionic character offer advantages over single-phase alternatives. Its potential in optoelectronic and energy conversion devices stems from improved visible-light absorption and charge carrier properties compared to conventional SiO₂ or Ta₂O₅, though industrial adoption remains limited and material processing remains an active research area.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationthin-film optoelectronicsemerging semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	-0.000104	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control