SiSn is a silicon-tin compound semiconductor material that combines the two group IV elements to create a tunable bandgap material. While not yet commercialized at production scale, SiSn is actively researched as a potential next-generation semiconductor for optoelectronic and photonic applications, offering the possibility of direct bandgap engineering and monolithic integration with existing silicon infrastructure—advantages over conventional indirect-bandgap silicon.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.347 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2480 | eV | DFT · OptB88vdW | ||
| ↳ | 0.5900 | eV | Measured | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 28.76 | - | DFT · OptB88vdW | ||
| ↳ | 24.66 range 24.53–24.80median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 22.04 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.02000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.03000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.2446 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00401 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00366 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -142.8 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 188.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1596 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1572 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data