SiSn

semiconductor
· SiSn

SiSn is a silicon-tin compound semiconductor material that combines the two group IV elements to create a tunable bandgap material. While not yet commercialized at production scale, SiSn is actively researched as a potential next-generation semiconductor for optoelectronic and photonic applications, offering the possibility of direct bandgap engineering and monolithic integration with existing silicon infrastructure—advantages over conventional indirect-bandgap silicon.

infrared optoelectronicsphotonic integrated circuitsmid-infrared detectorssilicon photonics integrationthin-film research applicationsbandgap engineering research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Density(ρ)
4.347
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
0.5900
eV
0.2480
eV
Dielectric Constant (Relative Permittivity)(εr)2 entries
28.76
-
24.66
range 24.53–24.80median of 2 measurements
-
Magnetic Moment(μB)
0.000
µB
Piezoelectric Modulus(eij)
0.2446
C/m²
Seebeck Coefficient(S)
-142.8
µV/K
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.1596
eV/atom
Formation Energy(ΔHf)
0.1572
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.