SiSn is a silicon-tin compound semiconductor material that combines the two group IV elements to create a tunable bandgap material. While not yet commercialized at production scale, SiSn is actively researched as a potential next-generation semiconductor for optoelectronic and photonic applications, offering the possibility of direct bandgap engineering and monolithic integration with existing silicon infrastructure—advantages over conventional indirect-bandgap silicon.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.347 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5900 | eV | — | ||
| ↳ | 0.2480 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 28.76 | - | — | ||
| ↳ | 24.66 range 24.53–24.80median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.2446 | C/m² | — | ||
Seebeck Coefficient(S) | -142.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1596 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1572 | eV/atom | — |