SiSb is a binary semiconductor compound composed of silicon and antimony, belonging to the III–V semiconductor family. It is primarily investigated in research contexts for optoelectronic and thermoelectric applications, where its direct bandgap and high carrier mobility make it potentially useful for infrared detectors and high-temperature power generation devices. SiSb remains largely experimental compared to more established III–V compounds (such as GaAs or InSb), but represents a materials research direction for integrating antimony-based semiconductors with silicon-compatible processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.900 | eV | — |