Silicon phosphide (SiP) is a binary III-V semiconductor compound combining silicon with phosphorus, representing an emerging material in the semiconductor research space. While not yet widely deployed in high-volume production, SiP is of interest for potential optoelectronic and high-speed electronic applications where III-V semiconductors offer advantages over conventional silicon, such as direct bandgap properties and higher electron mobility. Engineers and researchers consider SiP as part of broader efforts to develop heteroepitaxial III-V devices on silicon substrates, which could enable monolithic integration of photonic and electronic functions on mainstream silicon manufacturing platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 65.85 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.09169 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.77 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.01810 | C/m² | — | ||
Seebeck Coefficient(S) | -11.88 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3985 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.3208 | eV/atom | — | ||
| ↳ | 0.2497 | eV/atom | — |