SiP — Properties & Data | MatWorld

SiP

Name: SiP
Brand: MatWorld

semiconductor

· SiP

Silicon phosphide (SiP) is a binary III-V semiconductor compound combining silicon with phosphorus, representing an emerging material in the semiconductor research space. While not yet widely deployed in high-volume production, SiP is of interest for potential optoelectronic and high-speed electronic applications where III-V semiconductors offer advantages over conventional silicon, such as direct bandgap properties and higher electron mobility. Engineers and researchers consider SiP as part of broader efforts to develop heteroepitaxial III-V devices on silicon substrates, which could enable monolithic integration of photonic and electronic functions on mainstream silicon manufacturing platforms.

optoelectronic devices (research phase)high-speed integrated circuitsheterogeneous integrationphotonic-electronic integrationlab-scale device fabrication

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Exfoliation Energy(Eexf)	65.85	meV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.09169	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.000	eV	Measured
↳	1.244	eV	DFT · OptB88vdW
↳	1.896	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	11.77	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	10.80	-	DFT · OptB88vdW
↳	8.407	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.5267	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.320	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.01810	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00298	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000901	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-250.6	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	231.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	25.23	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.3985	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	0.2497	eV/atom	DFT · OptB88vdW
↳	-0.3208	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiP

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