SiP2 is a silicon phosphide compound semiconductor belonging to the III-V semiconductor family, representing an emerging material system with potential for high-performance electronic and optoelectronic devices. This is primarily a research-phase material being investigated for applications requiring wide bandgap semiconductors, offering distinct lattice properties that differentiate it from more established semiconductors like GaAs or SiC. Engineers would consider SiP2 in advanced research contexts where novel band structure characteristics, thermal stability, or integration with silicon-based processing could provide advantages over conventional III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 1,763.7 | ksi | — | ||
| ↳ | 4,892.1 | ksi | — | ||
Exfoliation Energy(Eexf) | 70.10 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2100 | - | — | ||
Shear Modulus(G)2 entries | 1,515.3 | ksi | — | ||
| ↳ | 3,640.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.08624 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.890 | eV | — | ||
| ↳ | 1.194 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.01 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -262.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1322 | eV/atom | — |