SiP2 — Properties & Data | MatWorld

SiP2

Name: SiP2
Brand: MatWorld

semiconductor

· SiP2

SiP2 is a silicon phosphide compound semiconductor belonging to the III-V semiconductor family, representing an emerging material system with potential for high-performance electronic and optoelectronic devices. This is primarily a research-phase material being investigated for applications requiring wide bandgap semiconductors, offering distinct lattice properties that differentiate it from more established semiconductors like GaAs or SiC. Engineers would consider SiP2 in advanced research contexts where novel band structure characteristics, thermal stability, or integration with silicon-based processing could provide advantages over conventional III-V compounds.

wide-bandgap electronics (research)high-temperature semiconductor devicessilicon photonics integrationadvanced optoelectronics (emerging)power electronics (exploratory)quantum and specialty semiconductor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	1,763.7	ksi	DFT
↳	4,892.1	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	70.10	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2100	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	1,515.3	ksi	DFT
↳	3,640.4	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.08624	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.194	eV	DFT · OptB88vdW
↳	1.618	eV	DFT · TBmBJ
↳	1.890	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	12.01	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.27	-	DFT · OptB88vdW
↳	8.918	-	DFT · TBmBJ
Electron Effective Mass(m*e)	1.227	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.9933	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00400	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000965	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-262.6	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	226	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.43	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1322	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiP2

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