SiNbO2N
semiconductorSiNbO2N is an oxynitride ceramic compound combining silicon, niobium, oxygen, and nitrogen—a material class valued for combining refractory strength with controlled electrical properties. This is primarily a research and advanced materials compound used in demanding thermal and electronic applications where conventional oxides or nitrides alone fall short. Its mixed anion chemistry allows tuning of mechanical toughness and thermal stability, making it attractive for next-generation high-temperature electronics, wear-resistant coatings, and structural applications in extreme environments; industrial adoption remains limited, with most development focused on thin films and specialized aerospace or defense applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |