SiInON₂ is an experimental ceramic compound combining silicon, indium, oxygen, and nitrogen—a member of the oxynitride ceramic family that blends properties of traditional oxides and nitrides. This material is primarily of research interest for high-temperature structural applications and wide-bandgap semiconductor device research, where the indium content may enable tuning of electronic properties or thermal characteristics beyond conventional silicon nitride or alumina ceramics. While not yet in widespread industrial production, oxynitride ceramics in this family are investigated for advanced thermal barriers, high-frequency electronics, and next-generation refractory applications where thermal stability and chemical resistance are critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.237 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.920 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data