SiInO2N — Properties & Data | MatWorld

SiInO2N

ceramic

· SiInO2N

SiInO₂N is an experimental oxynitride ceramic compound combining silicon, indium, oxygen, and nitrogen—a material class primarily explored in research settings for advanced semiconductor and high-temperature applications. While not yet established in mainstream production, oxynitride ceramics of this family are investigated for potential use in optoelectronic devices, high-temperature structural components, and solid-state lighting due to their tunable bandgap and thermal stability. The indium-containing oxynitride composition represents an emerging alternative to conventional nitride and oxide ceramics, offering potential advantages in properties like thermal conductivity and refractive index, though commercial viability and manufacturing scalability remain under development.

semiconductor researchhigh-temperature ceramicsoptoelectronic devicesexperimental thin filmssolid-state lightingthermal barrier materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.945	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.300	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental