SiInN3 — Properties & Data | MatWorld

SiInN3

ceramic

· SiInN3

SiInN₃ is an experimental ternary nitride ceramic compound combining silicon, indium, and nitrogen, belonging to the wide-bandgap semiconductor and advanced ceramic family. While not yet established in high-volume production, this material is of research interest for high-temperature and high-power electronic applications, leveraging the thermal stability and wide bandgap characteristics typical of nitride systems (similar to GaN and AlN). The indium incorporation differentiates it from binary nitrides and may offer tailored bandgap engineering or enhanced performance in niche optoelectronic or power device contexts, though practical engineering adoption remains limited and material consistency is still under development.

high-temperature electronics (research phase)wide-bandgap semiconductorspower device substrates (experimental)optoelectronics (research)thermal management coatings (potential)advanced ceramics for extreme environments

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.900	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.080	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental