SiHfOFN

semiconductor

· SiHfOFN

SiHfOFN is an experimental oxynitride ceramic compound combining silicon, hafnium, oxygen, and nitrogen phases. Research in this material family focuses on advanced gate dielectrics and high-temperature structural applications, where the combination of hafnium's high dielectric constant with silicon nitride's thermal stability offers potential improvements over traditional SiO₂ in demanding environments. While primarily in development rather than widespread industrial production, this material class is being investigated for next-generation semiconductor devices and ultra-high-temperature aerospace components where conventional oxides begin to degrade.

advanced semiconductor gate dielectricshigh-k dielectric materialsaerospace thermal barriersresearch and development compoundsnext-generation MOSFET technologies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	-5.179e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiHfOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control