SiHfO3

semiconductor
· SiHfO3

SiHfO3 is a hafnium silicate ceramic compound that combines silicon and hafnium oxides, belonging to the class of advanced refractory and dielectric materials. This material is primarily of research and developmental interest for high-temperature applications and next-generation semiconductor gate dielectrics, where it offers potential improvements in thermal stability and dielectric performance compared to conventional oxides. Its notable appeal lies in its high melting point and chemical inertness, making it a candidate for extreme-environment electronics and thermal barrier coating systems, though industrial adoption remains limited and its properties continue to be characterized in academic and industrial research settings.

advanced semiconductor gate dielectricshigh-temperature structural ceramicsthermal barrier coatingsrefractory applicationsnext-generation integrated circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
—
eV——
↳
—
eV——
Magnetic Moment(μB)2 entries
—
μB——
↳
—
μB——
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
—
eV/atom——
↳
—
eV/atom——
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.