SiGeN₂ is a ternary ceramic compound combining silicon, germanium, and nitrogen into a single-phase nitride structure. This material remains primarily in research and development phases, explored for its potential as a wide-bandgap semiconductor and refractory ceramic with thermal and electrical properties intermediate to silicon nitride and germanium nitride. Its key appeal lies in tuning properties between its binary parent compounds for specialized high-temperature or semiconductor applications where neither parent material alone is optimal.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1444 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.843 | eV | DFT · OptB88vdW | ||
| ↳ | 2.086 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 6.535 | - | DFT · OptB88vdW | ||
| ↳ | 5.714 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 21.11 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1489 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5730 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data