SiGeC is a ternary ceramic compound combining silicon, germanium, and carbon, belonging to the wide-bandgap semiconductor and refractory ceramic family. This material is primarily investigated in research contexts for advanced high-temperature electronics, optoelectronics, and thermal management applications where superior thermal conductivity and chemical stability are required. Its ternary composition offers tunable properties between SiC and GeC end members, making it of interest for next-generation power devices, radiation-resistant components, and extreme-environment sensing systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.07 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3100 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 30.16 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.889 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.128 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.9651 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data