SiGeAs is a ternary semiconductor ceramic compound combining silicon, germanium, and arsenic elements, belonging to the III-V and IV semiconductor family. It is primarily investigated in research and development contexts for optoelectronic and high-frequency applications where tunable bandgap and heterostructure properties are valuable. The material is notable for its potential in infrared detectors, photovoltaic devices, and specialized electronic applications where lattice-matching between dissimilar semiconductors is critical, though it remains less commercialized than binary counterparts like GaAs or pure Ge.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.240 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 2.020 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.513 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6327 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.5892 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data