SiGaO2F

semiconductor

· SiGaO2F

SiGaO₂F is a mixed-anion semiconductor compound combining silicon, gallium, oxygen, and fluorine elements, representing an emerging material in the wide-bandgap semiconductor family. While not yet widely commercialized, this compound is of research interest for potential optoelectronic and power electronic applications where the fluorine substitution may modulate electronic properties relative to conventional gallium oxide (Ga₂O₃) systems. The material's development context suggests investigation into deep-UV photodetection, high-temperature electronics, or high-power switching applications where ultra-wide bandgap semiconductors offer advantages over silicon and GaN.

UV photodetectors (experimental)High-power semiconductor devices (research)Wide-bandgap electronicsGallium oxide derivativesNext-generation power electronics (potential)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—
Magnetic Moment(μB)	-2.713e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control