SiCsO₂N is a silicon carbide-based ceramic compound incorporating silicon, carbon, oxygen, and nitrogen phases, representing a multi-phase composite ceramic system. This material family is developed for high-temperature structural applications where enhanced oxidation resistance, thermal shock tolerance, and mechanical retention at elevated temperatures are critical; it is primarily of research and specialized industrial interest rather than commodity use. The nitrogen and oxygen doping of silicon carbide matrices improves grain boundary strength and creep resistance compared to monolithic SiC, making it relevant for aerospace propulsion, power generation, and extreme-environment engineering contexts where conventional ceramics or metallic superalloys reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.000294 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.460 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data