Silicon tetrabromide (SiBr4) is a volatile halogenated silicon compound and ceramic precursor material used primarily in chemical vapor deposition (CVD) and thin-film synthesis routes. It serves as a source chemical for producing high-purity silicon-based ceramics and semiconductors, and is notable for its ability to generate silicon dioxide or silicon nitride coatings at relatively moderate temperatures compared to other silicon halide precursors. Engineers select SiBr4 over alternatives like SiCl₄ when precise control over deposition chemistry or reduced chlorine contamination is required in specialty coating and materials manufacturing processes.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.523 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.849 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7906 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data