SiAsP₂ is a mixed-anion ceramic compound combining silicon, arsenic, and phosphorus in a single-phase structure. This material belongs to the family of III-V and related semiconducting ceramics, and appears to be primarily a research compound with potential applications in optoelectronics and high-temperature semiconductor devices. The incorporation of arsenic alongside phosphorus creates a material system of interest for tuning bandgap and thermal properties in niche semiconductor applications, though it remains less commercially established than conventional binary or ternary ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.143 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7908 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.6916 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data