SiAs₂ is a layered semiconductor compound composed of silicon and arsenic, belonging to the class of binary chalcogenide-like materials with potential for two-dimensional applications. This material is primarily of research interest rather than established industrial use, investigated for its electronic and optoelectronic properties in emerging nanoelectronics, particularly as a candidate for thin-film transistors, photodetectors, and layered heterostructure devices. SiAs₂ is notable within the silicon-arsenide family for its layered crystal structure, which makes it amenable to exfoliation into ultrathin sheets for quantum materials research and next-generation semiconductor applications where tunable bandgap and layer-dependent properties are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 78.56 | meV/atom | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.142 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.8800 | eV | Measured | ||
| ↳ | 0.8720 | eV | DFT · OptB88vdW | ||
| ↳ | 1.599 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.83 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.06 | - | DFT · OptB88vdW | ||
| ↳ | 10.01 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.4733 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.9300 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00255 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00162 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -183.9 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 222.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 30.77 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.05220 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data