SiAs2
semiconductorSiAs₂ is a layered semiconductor compound composed of silicon and arsenic, belonging to the class of binary chalcogenide-like materials with potential for two-dimensional applications. This material is primarily of research interest rather than established industrial use, investigated for its electronic and optoelectronic properties in emerging nanoelectronics, particularly as a candidate for thin-film transistors, photodetectors, and layered heterostructure devices. SiAs₂ is notable within the silicon-arsenide family for its layered crystal structure, which makes it amenable to exfoliation into ultrathin sheets for quantum materials research and next-generation semiconductor applications where tunable bandgap and layer-dependent properties are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | — | meV/atom | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |