Silicon (Si) is a crystalline semiconductor element that forms the backbone of modern electronics and photovoltaic technology. It is widely used in integrated circuits, microprocessors, solar cells, and optoelectronic devices where its tunable electronic properties and established manufacturing infrastructure provide unmatched advantages. Engineers select silicon for applications requiring precise control of electrical conductivity, high thermal stability, and compatibility with mature fabrication processes—though its brittleness and indirect bandgap limit its use in some high-power or high-efficiency light-emitting applications where direct-bandgap semiconductors may be preferred.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 11,835.1 | ksi | DFT · OptB88vdW | ||
| ↳ | 12,039.8 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.3014 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.1800 | - | DFT · OptB88vdW | ||
| ↳ | 0.2042 | - | DFT · PBE | ||
Shear Modulus(G)2 entries | 9,476.8 | ksi | DFT · OptB88vdW | ||
| ↳ | 8,870.7 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 86.67 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.08920 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.7310 | eV | DFT · OptB88vdW | ||
| ↳ | 1.277 | eV | DFT · TBmBJ | ||
| ↳ | 1.220 | eV | DFT · HSE06 | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.03 | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 13.49 | - | DFT · OptB88vdW | ||
| ↳ | 10.74 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.3100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.4500 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00405 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00384 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -224 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 230.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.23 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1666 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data