Si₈As₁₆ is a narrow-gap semiconductor compound belonging to the III-V or IV-IV semiconductor family, likely investigated as a potential material for optoelectronic and electronic devices where bandgap engineering is critical. This composition represents an experimental or specialized research material rather than a widely commercialized product; its specific properties and phase stability would depend on crystalline structure and doping, making it of interest to researchers exploring new semiconductor compositions for niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8716 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05200 | eV/atom | — |