Si6W3 is an experimental semiconductor compound combining silicon and tungsten in a 6:3 stoichiometric ratio, representing a research-phase material in the transition metal silicide family. This material is primarily of interest in materials science research exploring novel wide-bandgap semiconductors and high-temperature electronic applications, though it remains largely in development stages without established commercial production. Engineers would consider such tungsten silicide compounds for potential next-generation power electronics, high-temperature sensors, or specialized optoelectronic devices where enhanced thermal stability and electronic properties beyond conventional Si or SiC might provide advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 209.1 | GPa | — | ||
Shear Modulus(G) | 138.5 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04010 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1170 | eV/atom | — |