Si₆As₆ is an experimental III-V semiconductor compound combining silicon and arsenic in a stoichiometric ratio, representing a non-standard composition in the broader family of silicon-arsenic materials. This compound is primarily of research interest for semiconductor physics and materials science studies, as it explores alternative crystal structures and electronic properties beyond conventional GaAs or other established III-V semiconductors. Its potential applications lie in niche optoelectronic or high-frequency device research, though it has not achieved widespread industrial adoption compared to mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.76 | GPa | — | ||
Shear Modulus(G) | 28.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9804 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05700 | eV/atom | — |