Si₄Mn₂Nd₂ is an intermetallic compound combining silicon, manganese, and neodymium—a rare-earth doped semiconductor material. This composition is primarily of research interest for magnetic and electronic applications, leveraging neodymium's strong magnetic properties and the semiconductor character of the silicon-manganese base. The material family is explored for potential use in permanent magnets, magnetoelectronic devices, and high-temperature semiconductor applications where rare-earth doping enhances functional properties over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 110.0 | GPa | — | ||
Shear Modulus(G) | 54.35 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5570 | eV/atom | — |