Si₄Br₁₂Tb₁₂ is a halide-based semiconductor compound combining silicon, bromine, and terbium (a rare-earth element). This is an experimental/research-phase material belonging to the family of rare-earth halide semiconductors, which are being investigated for optoelectronic and photonic applications where rare-earth dopants or host matrices offer unique luminescent or electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01040 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.451 | eV/atom | — |