Si4 As8 Ba6

semiconductor

· Si4 As8 Ba6

Si₄As₈Ba₆ is an experimental compound semiconductor combining silicon, arsenic, and barium elements, belonging to the broader family of mixed-metal arsenide semiconductors. This material is primarily of research interest for exploring novel electronic and optoelectronic properties that may not be achievable with conventional binary or ternary semiconductors. While not yet established in high-volume commercial applications, compounds in this chemical family are investigated for potential use in specialized semiconductor devices where the multi-element composition offers tunable bandgaps, carrier dynamics, or crystalline properties distinct from more conventional III–V or II–VI alternatives.

experimental semiconductor researchoptoelectronic device developmentbandgap engineeringsolid-state physics researchcompound semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7732	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8520	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si4 As8 Ba6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control