Si₃P₁ is a silicon phosphide compound semiconductor belonging to the III-V semiconductor family, representing a non-equilibrium or experimental composition in the silicon-phosphorus system. This material is primarily of research interest for potential optoelectronic and high-temperature electronic applications, though it remains less developed than conventional semiconductors like GaP or InP. Its potential advantages would include wide bandgap characteristics and thermal stability, making it relevant for next-generation power electronics and harsh-environment sensors if synthesis and doping methods can be commercialized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6870 | eV/atom | — |