Si3 Ge1

semiconductor

· Si3 Ge1

Si₃Ge₁ is a silicon-germanium compound semiconductor representing a specific stoichiometric ratio within the SiGe alloy family. This material is primarily of research and developmental interest rather than widely commercialized, as it explores the properties of silicon-germanium combinations for advanced semiconductor applications where tuned bandgap and lattice parameters are advantageous.

high-frequency transistorsheterojunction bipolar transistors (HBTs)optoelectronic devicesphotovoltaic researchintegrated circuitsmaterials research and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6640	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Si3 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control