Si₂Zn₂As₄ is a quaternary III-V semiconductor compound combining silicon, zinc, and arsenic elements in a fixed stoichiometric ratio. This material belongs to the family of zinc-blende or related crystal structures and is primarily explored in research contexts for optoelectronic and photovoltaic applications where tunable bandgap and direct/indirect transition properties are valuable. While not yet widely deployed in high-volume industrial production, compounds in this chemical family are investigated for potential use in infrared detectors, solar cells, and quantum dot applications where conventional binary semiconductors (GaAs, InP) or simpler ternary systems may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8809 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1820 | eV/atom | — |