Si₂Tb₁Os₂ is an intermetallic compound combining silicon, terbium (a rare-earth element), and osmium—a research-phase material rather than an established commercial semiconductor. This composition falls within the broader family of rare-earth intermetallics and refractory compounds, which are being investigated for high-temperature electronics, quantum applications, and exotic device structures where conventional semiconductors reach thermal or functional limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6940 | eV/atom | — |