Si₂S₈Tl₈ is an experimental semiconductor compound combining silicon, sulfur, and thallium elements, representing a mixed-valence or layered chalcogenide-based material system. This compound belongs to the broader family of thallium-containing semiconductors and sulfide compounds, which are of research interest for specialized optoelectronic and photonic applications due to their tunable band structures and potential for nonlinear optical properties. While not established in mainstream production, compounds in this chemical family are investigated for next-generation photovoltaics, infrared detection, and quantum optics where conventional semiconductors prove limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,928.2 | ksi | — | ||
Shear Modulus(G) | 1,086.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.996 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5880 | eV/atom | — |